Product Summary

The buz385 is a Power Transistor.

Parametrics

buz385 absolute maximum ratings: (1)Drain source voltage, VDS: 500 V; (2)Drain-gate voltage, VDGR: 500V; (3)Continuous drain current, ID: 9A; (4)Pulsed drain current, IDpuls: 36A; (5)Gate source voltage, VGS: ± 20 V; (6)Power dissipation, Ptot: 125W; (7)Operating temperature, Tj: -55 to + 150℃; (8)Storage temperature, Tstg: -55 to + 150℃.

Features

buz385 features: (1)N channel; (2)Enhancement mode; (3)FREDFET.

Diagrams

buz385 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BUZ385
BUZ385
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BUZ305
BUZ305
Other

Data Sheet
Negotiable 
BUZ307
BUZ307
Other

Data Sheet
Negotiable 
BUZ308
BUZ308
Other

Data Sheet
Negotiable 
BUZ30A H
BUZ30A H
Infineon Technologies
MOSFET N-Channel 200V Transistor
Data Sheet
0-1: $1.03
1-10: $0.92
10-100: $0.85
100-500: $0.76
BUZ30A H3045A
BUZ30A H3045A
Infineon Technologies
MOSFET N-Channel 200V Transistor
Data Sheet
0-1: $1.03
1-10: $0.92
10-100: $0.85
100-250: $0.76
250-1000: $0.58
BUZ31 E3046
BUZ31 E3046
Infineon Technologies
MOSFET N-KANAL POWER MOS
Data Sheet
Negotiable