Product Summary
The buz385 is a Power Transistor.
Parametrics
buz385 absolute maximum ratings: (1)Drain source voltage, VDS: 500 V; (2)Drain-gate voltage, VDGR: 500V; (3)Continuous drain current, ID: 9A; (4)Pulsed drain current, IDpuls: 36A; (5)Gate source voltage, VGS: ± 20 V; (6)Power dissipation, Ptot: 125W; (7)Operating temperature, Tj: -55 to + 150℃; (8)Storage temperature, Tstg: -55 to + 150℃.
Features
buz385 features: (1)N channel; (2)Enhancement mode; (3)FREDFET.
Diagrams
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![]() BUZ385 |
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![]() BUZ30A |
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![]() MOSFET N-CH 200V 21A |
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![]() BUZ30A H |
![]() Infineon Technologies |
![]() MOSFET N-Channel 200V Transistor |
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![]() BUZ30A H3045A |
![]() Infineon Technologies |
![]() MOSFET N-Channel 200V Transistor |
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![]() BUZ31 E3046 |
![]() Infineon Technologies |
![]() MOSFET N-KANAL POWER MOS |
![]() Data Sheet |
![]() Negotiable |
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![]() BUZ31 H |
![]() Infineon Technologies |
![]() MOSFET N-Channel 200V Transistor |
![]() Data Sheet |
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![]() BUZ31 H3045A |
![]() Infineon Technologies |
![]() MOSFET N-Channel 200V Transistor |
![]() Data Sheet |
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