Product Summary

The e28f640j3a150 is a StrataFlash Memory. It contains high-density memories organized as 32 Mbytes or 16Mwords (256-Mbit, available on the 0.18μm lithography process only), 16 Mbytes or 8 Mwords(128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). The e28f640j3a150 can be accessed as 8- or 16-bit words. A 128-bit Protection Register has multiple uses, including unique flash device identification. The e28f640j3a150’s optimized architecture and interface dramatically increases read performance by supporting page-mode reads. This read mode is ideal for non-clock memory systems.

Parametrics

e28f640j3a150 absolute maximum ratings: (1)Temperature under Bias Extended: –40 ℃ to +85 ℃; (2)Storage Temperature: –65 ℃ to +125 ℃; (3)Voltage On Any signal: –2.0 V to +5.0 V; (4)Output Short Circuit Current: 100 mA.

Features

e28f640j3a150 features: (1)110/115/120/150 ns Initial Access Speed; (2)125 ns Initial Access Speed (256 Mbit density only); (3)25 ns Asynchronous Page mode Reads; (4)30 ns Asynchronous Page mode Reads(256Mbit density only); (5)32-Byte Write Buffer: 6.8 μs per byte effective programming time; (6)Program and Erase suspend support; (7)Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible; (8)Absolute Protection with VPEN = GND; (9)Individual Block Locking; (10)Block Erase/Program Lockout during Power Transitions.

Diagrams

e28f640j3a150 block diagram

E28F008S5120
E28F008S5120

IC FLASH 8MBIT 120NS 40TSOP
Data Sheet
Negotiable 
E28F320J3A110SL5FS
E28F320J3A110SL5FS

IC FLASH 32MBIT 110NS 56TSOP
Data Sheet
Negotiable