m29f800db70m1

memory, TSOP, -0.6 to 6V, m29f800db70m1, STMicroelectronics

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Price:: US $2.00~3.00 / piece [Get Latest Price]

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	US $2.00~3.00

PartNumber:: m29f800db70m1

Brand:: STMicroelectronics - ST | Pack: TSSOP | D/C: 07+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-05-15

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Product Summary

The m29f800db70m1 is an 8 Mbit (1Mb x8 or 512Kb x16)non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The m29f800db70m1 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Parametrics

m29f800db70m1 absolute maximum ratings: (1)TBIAS Temperature Under Bias: min=-50℃, max=125℃; (2)TSTG Storage Temperature: min=-65℃, max=150℃; (3)VIO Input or Output Voltage (1,2): min=-0.6V, max=VCC+0.6V; (4)VCC Supply Voltage: min=-0.6, max=6V; (5)VID Identification Voltage: min=-0.6V, max=13.5V.

Features

m29f800db70m1 features: (1)SUPPLY VOLTAGE: VCC = 5V ±10% for Program, Erase and Read; (2)ACCESS TIME: 55, 70, 90ns; (3)PROGRAMMING TIME: 10μs per Byte/Word typical; (4)19 MEMORY BLOCKS: 1 Boot Block (Top or Bottom Location); 2 Parameter and 16 Main Blocks; (5)PROGRAM/ERASE CONTROLLER: Embedded Byte/Word Program algorithms; (6)ERASE SUSPEND and RESUME MODES: Read and Program another Block during Erase Suspend; (7)UNLOCK BYPASS PROGRAM COMMAND: Faster Production/Batch Programming.