Product Summary

The m29f800db70m1 is an 8 Mbit (1Mb x8 or 512Kb x16)non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The m29f800db70m1 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Parametrics

m29f800db70m1 absolute maximum ratings: (1)TBIAS Temperature Under Bias: min=-50℃, max=125℃; (2)TSTG Storage Temperature: min=-65℃, max=150℃; (3)VIO Input or Output Voltage (1,2): min=-0.6V, max=VCC+0.6V; (4)VCC Supply Voltage: min=-0.6, max=6V; (5)VID Identification Voltage: min=-0.6V, max=13.5V.

Features

m29f800db70m1 features: (1)SUPPLY VOLTAGE: VCC = 5V ±10% for Program, Erase and Read; (2)ACCESS TIME: 55, 70, 90ns; (3)PROGRAMMING TIME: 10μs per Byte/Word typical; (4)19 MEMORY BLOCKS: 1 Boot Block (Top or Bottom Location); 2 Parameter and 16 Main Blocks; (5)PROGRAM/ERASE CONTROLLER: Embedded Byte/Word Program algorithms; (6)ERASE SUSPEND and RESUME MODES: Read and Program another Block during Erase Suspend; (7)UNLOCK BYPASS PROGRAM COMMAND: Faster Production/Batch Programming.

Diagrams

m29f800db70m1 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
M29F800DB70M1
M29F800DB70M1

STMicroelectronics

Flash 1Mx8 or 512Kx16 70ns

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
M29F002B
M29F002B

Other


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M29F002BB
M29F002BB

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M29F002BB70K1
M29F002BB70K1

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable 
M29F002BB70K6
M29F002BB70K6

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable 
M29F002BB70K6E
M29F002BB70K6E


IC FLASH 2MBIT 70NS 32PLCC

Data Sheet

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M29F002BB70N1
M29F002BB70N1

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable