Product Summary

The H11B1 is a photodarlington optocoupler. The H11B1 has a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. The applications of the H11B1 are (1)Low power logic circuits; (2)Telecommunications equipment; (3)Portable electronics; (4)Solid state relays; (5)Interfacing coupling systems of different potentials and impedances.

Parametrics

H11B1 absolute maximum ratings: (1)storage temperature, Tstg: -55 to +150℃; (2)operating temperature Topr: -55 to +100℃; (3)lead solder temperature Tsol: 260℃ for 10 sec; (4)total device power dissipation @ Ta = 25℃, Pd: 250 mW.

Features

H11B1 features: (1)High sensitivity to low input drive current; (2)Meets or exceeds all JEDEC Registered Specifications; (3)VDE 0884 approval available as a test option add option .300. (e.g., H11B1.300).

Diagrams

H11B1 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
H11B1
H11B1
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Data Sheet
0-1: $0.43
1-10: $0.40
10-100: $0.37
100-250: $0.35
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H11B1_Q
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H11B1300W
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H11B13S
H11B13S
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H11B13SD
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H11B1M
H11B1M
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Data Sheet
0-1: $0.32
1-25: $0.20
25-100: $0.16
100-250: $0.13
H11B1S
H11B1S
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Transistor Output Optocouplers Optocoupler SM-DIP6 Photodarlington
Data Sheet
Negotiable