Product Summary
The irli2505 is a HEXFET from International Rectifier. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the irli2505 is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Parametrics
irli2505 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 58A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 41 A; (3)IDM, Pulsed Drain Current: 360W; (4)PD @TC = 25℃, Power Dissipation: 63 W; (5)Linear Derating Factor: 0.42 W/℃; (6)VGS, Gate-to-Source Voltage: ±16 V; (7)EAS, Single Pulse Avalanche Energy: 500 mJ; (8)IAR, Avalanche Current: 54 A; (9)EAR, Repetitive Avalanche Current: 6.3 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃.
Features
irli2505 features: (1)Logic-Level Gate Drive; (2)Advanced Process Technology; (3)Ultra Low On-Resistance; (4)Isolated Package; (5)High Voltage Isolation = 2.5KVRMS; (6)Sink to Lead Creepage Dist. = 4.8mm; (7)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRLI2505 |
MOSFET N-CH 55V 58A TO220FP |
Data Sheet |
Negotiable |
|
||||||||||||
IRLI2505PBF |
International Rectifier |
MOSFET N-CH 55V 58A TO220FP |
Data Sheet |
|
|