(China (Mainland))
Product Summary
The nand08gw3b2an6 is a non-volatile Flash memory that uses NAND cell technology. The nand08gw3b2an6 has a density of 4 Gbits and 8 Gbits, respectively. The nand08gw3b2an6 operates from a 3V voltage supply. The size of a Page is 2112 Bytes (2048 + 64 spare). The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 Input/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.
Parametrics
nand08gw3b2an6 absolute maximum ratings: (1)TBIAS Temperature Under Bias: – 50 to 125℃; (2)TSTG Storage Temperature: – 65 to 150℃; (3)VIO Input or Output Voltage: – 0.6 to 4.6 V; (4)VDD Supply Voltage: – 0.6 to 4.6 V.
Features
nand08gw3b2an6 features: (1)High density NAND Flash Memory; (2)NAND Interface; (3)Page size– (2048 + 64 spare) Bytes; (4)Block size– (128K + 4K spare) Bytes; (5)Page Read/Program– Random access: 25μs (max); Sequential access: 30ns (min); Page program time: 200μs (typ); (6)Copy Back Program mode– Fast page copy without external buffering; (7)Cache Program and Cache Read modes– Internal Cache Register to improve the program and read throughputs; (8)Fast Block Erase– Block erase time: 2ms (typ); (9)Status Register; (10)Electronic Signature; (11)Serial Number option.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 NAND08GW3B2AN6E |
STMicroelectronics |
Flash 4 GBit 2112 Byte 1056 WP 1.8v/3v |
Data Sheet |
Negotiable |
|
||||
|
NAND08GW3B2AN6F |
STMicroelectronics |
Flash 4 GB 2112B 1056 Word Pg 1.8V/3V |
Data Sheet |
Negotiable |
|
||||
