Product Summary

The fqpf10n50cf is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The fqpf10n50cf is well suited for high efficient switched mode power supplies and active power factor correction.

Parametrics

fqpf10n50cf absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 500 V; (2)ID, Drain Current - Continuous (TC = 25℃): 10A; Continuous (TC = 100℃): 6.35 A; (3)IDM, Drain Current - Pulsed: 40 A; (4)VGSS, Gate-Source voltage: ±30 V; (5)EAS, Single Pulsed Avalanche Energy: 388 mJ; (6)IAR, Avalanche Current: 10 A; (7)EAR, Repetitive Avalanche Energy: 14.3 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation: 48 W; (10)Tj, Tstg, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum Lead Temperature for Soldering Purpose,; (12)1/8" from Case for 5 Seconds: 300℃.

Features

fqpf10n50cf features: (1)10A, 500V, RDS(on) = 0.61Ω @VGS = 10 V; (2)Low gate charge (typical 43 nC); (3)Low Crss (typical 16pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)Fast recovery body diode.

Diagrams

fqpf10n50cf block diagram

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25-100: $0.80
100-250: $0.71
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