(China (Mainland))
Product Summary
The fqa13n50c is an N-Channel enhancement mode power field effect transistor. It produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The fqa13n50c is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
fqa13n50c absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 500 V; (2)ID, Drain Current - Continuous (TC = 25℃): 13.5 A; Continuous (TC = 100℃): 8.5 A; (3)IDM, Drain Current - Pulsed: 54 A; (4)VGSS, Gate-Source Voltage: ± 30 V; (5)EAS, Single Pulsed Avalanche Energy: 860 mJ; (6)IAR, Avalanche Current: 13.5 A; (7)EAR, Repetitive Avalanche Energy: 21.8 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 218 W; Derate above 25℃: 1.56 W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.
Features
fqa13n50c features: (1)13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V; (2)Low gate charge ( typical 43 nC); (3)Low Crss ( typical 20pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FQA13N50C |
Fairchild Semiconductor |
MOSFET 500V N-Channel Adv Q-FET C-Series |
Data Sheet |
Negotiable |
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FQA13N50CF |
Fairchild Semiconductor |
MOSFET 500V N-Ch C-FET (FRFET) |
Data Sheet |
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FQA13N50CF_F109 |
Fairchild Semiconductor |
MOSFET 500V N-Ch C-FET |
Data Sheet |
Negotiable |
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