(China (Mainland))
Product Summary
The SI5853DDC-T1-E3 is p-channel 20V (D-S) MOSFET with schottky diode. It is featured with little foot plus schottky power MOSFET. This device is widely used as charging switch for portable devices, with integrated low Vf trench schottky diode.
Parametrics
Absolute maximum ratings:(1)Drain-Source Voltage (MOSFET), VDS: -20V; (2)Reverse Voltage (Schottky), VKA: 20V; (3)Gate-Source Voltage (MOSFET), VGS: ±8V; (4)Continuous Drain Current (TJ = 150℃) (MOSFET), TC = 25℃, ID: -4A; (5)Continuous Drain Current (TJ = 150℃) (MOSFET), TC = 70℃, ID: -3.5A; (6)Continuous Drain Current (TJ = 150℃) (MOSFET), TA = 25℃, ID: -2.9A; (7)Continuous Drain Current (TJ = 150℃) (MOSFET), TA = 70℃, ID: -2.3A; (8)Pulsed Drain Current (MOSFET), IDM: -10A; (9)Continuous Source Current (MOSFET Diode Conduction), TC = 25℃, IS: -2.6A; (10)Continuous Source Current (MOSFET Diode Conduction), TA = 25℃, IS: -1.1A; (11)Average Forward Current (Schottky), IF: 1A; (12)Pulsed Forward Current (Schottky), IFM: 3A; (13)Maximum Power Dissipation (MOSFET), TC = 25℃, PD: 3.1W; (14)Maximum Power Dissipation (MOSFET), TC = 70℃, PD: 2W; (15)Maximum Power Dissipation (MOSFET), Ta = 25℃, PD: 1.3W; (16)Maximum Power Dissipation (MOSFET), Ta = 70℃, PD: 0.8W; (17)Maximum Power Dissipation (Schottky), TC = 25℃, PD: 2.5W; (18)Maximum Power Dissipation (Schottky), TC = 70℃, PD: 1.6W; (19)Maximum Power Dissipation (Schottky), Ta = 25℃, PD: 1.2W; (20)Maximum Power Dissipation (Schottky), Ta = 70℃, PD: 0.76W; (21)Operating Junction and Storage Temperature Range, TJ, Tstg: - 55 to 150℃; (22)Soldering Recommendation (Peak Temperature): 260℃.
Features
Features: (1)little foot plus schottky power MOSFET; (2)charging switch for portable devices; (3)with integrated low Vf trench schottky diode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI5853DDC-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 4.0A 3.1W 105mohm @ 4.5V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SI5853CDC-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 4.0A 3.1W |
Data Sheet |
Negotiable |
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Si5853DC |
Other |
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Data Sheet |
Negotiable |
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SI5853DC-T1 |
Vishay/Siliconix |
MOSFET 20V 3.6A 2.1W |
Data Sheet |
Negotiable |
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Si5853DDC |
Other |
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Data Sheet |
Negotiable |
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SI5853DDC-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 4.0A 3.1W 105mohm @ 4.5V |
Data Sheet |
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Si5855CDC-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 3.7A 2.8W 144mohm @ 4.5V |
Data Sheet |
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